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| PNP Silicon Darlington Transistors SMBTA 63 SMBTA 64 High collector current q High DC current gain q Type SMBTA 63 SMBTA 64 Marking s2U s2V Ordering Code (tape and reel) Q68000-A2625 Q68000-A2485 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 81 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol SMBTA 63 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 30 30 10 Values SMBTA 64 30 30 10 500 800 100 200 360 150 Unit V mA mW C - 65 ... + 150 280 210 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBTA 63 SMBTA 64 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 A Collector-base breakdown voltage IC = 10 A Emitter-base breakdown voltage IE = 10 A Collector-base cutoff current VCB = 30 V Emitter cutoff current VEB = 10 V DC current gain1) IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V SMBTA 63 SMBTA 64 SMBTA 63 SMBTA 64 VCEsat VBEsat V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 IEB0 hFE 5000 10000 10000 20000 - - - - - - - - - - - - 1.5 2 V 30 30 10 - - - - - - - - - - 100 100 - nA V Values typ. max. Unit Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz fT 125 - - MHz 1) Pulse test conditions: t 300 s, D = 2 %. Semiconductor Group 2 SMBTA 63 SMBTA 64 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) f = 1 MHz Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 3 SMBTA 63 SMBTA 64 Base-emitter saturation voltage IC = f (VBE sat), hFE = 1000 Collector-emitter saturation voltage IC = f (VCE sat), hFE = 1000 Collector cutoff current ICB0 = f (TA) VCB = VCE max DC current gain hFE = f (IC) VCE = 5 V Semiconductor Group 4 |
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